Yazarlar
- Gul, Fatih(2)
- Efeoglu, Hasan(1)
Yayınlar
- MakaleYalnız künye2018Carrier transport mechanism and bipolar resistive switching behavior of a nano-scale thin film TiO2 memristor
Gul, Fatih
A titanium dioxide (TiO2) based memristor device having an active layer thickness of 10 nm was fabricated using radio frequency (RF) reactive sputtering and its resistive switching characteristics and carrier transport mechanisms were investigated. Scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) were used to confirm the structural properties of the device. Measurement of the time-dependent current-voltage (I-V-t) was used to characterize resistive switching and memristive behavior. The characteristic pinched hysteresis I-V loops of the memristor were apparent. Bipolar and homogeneous resistive switching characteristics and a forming voltage of 2 V were detected in the device. The retention time exceeded 103 s and the endurance test was reasonably acceptable. In addition, the carrier transport mechanism of the device was revealed. The linear region of the low electric field demonstrated ohmic behavior, whereas the non-linear high electric field region was dominated by a Schottky emission carrier transport mechanism. A Poole-Frenkel emission mechanism acted as a secondary conduction mechanism. It was proposed that the Poole-Frenkel and Schottky emission mechanisms were associated with oxygen vacancies in the TiO2.
- MakaleYalnız künye2017Bipolar resistive switching and conduction mechanism of an Al/ZnO/Al-based memristor
Gul, Fatih; Efeoglu, Hasan
In this study, a direct-current reactive sputtered AliZnO/Al-based memristor device was fabricated and its resistive switching (RS) characteristics investigated. The optical and structural properties were confirmed by using UV vis spectrophotometry and x-ray diffraction, respectively. The memristive and resistive switching characteristics were determined using time dependent current voltage (I-V-t) measurements. The typical pinched hysteresis I-V loops of a memristor were observed. In addition, the device showed forming-free, uniform and bipolar RS behavior. The low electric field region exhibited ohmic conduction, while the Schottky emission (SE) was found to be the dominant conduction mechanism in the high electric field region. A weak Poole-Frenkel (PF) emission also appeared. In conclusion, it was suggested that the SE and PF mechanisms were related to the oxygen vacancies in the ZnO. (C) 2016 Elsevier Ltd. All rights reserved.