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Bipolar resistive switching and conduction mechanism of an Al/ZnO/Al-based memristor

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Özet

In this study, a direct-current reactive sputtered AliZnO/Al-based memristor device was fabricated and its resistive switching (RS) characteristics investigated. The optical and structural properties were confirmed by using UV vis spectrophotometry and x-ray diffraction, respectively. The memristive and resistive switching characteristics were determined using time dependent current voltage (I-V-t) measurements. The typical pinched hysteresis I-V loops of a memristor were observed. In addition, the device showed forming-free, uniform and bipolar RS behavior. The low electric field region exhibited ohmic conduction, while the Schottky emission (SE) was found to be the dominant conduction mechanism in the high electric field region. A weak Poole-Frenkel (PF) emission also appeared. In conclusion, it was suggested that the SE and PF mechanisms were related to the oxygen vacancies in the ZnO. (C) 2016 Elsevier Ltd. All rights reserved.

Anahtar Kelimeler

MemristorZinc oxideBipolar resistive switchingSchottky emissionOxygen vacancies
RDL Kalıcı Bağlantı (PID)
https://rdlopen.rawdatalibrary.net/r/gumushane/15981Resmi atıflarda kullanılan kalıcı adres
DOI
https://doi.org/10.1016/j.spmi.2016.11.043Yayıncı resmi DOI adresi
Tam Kayıt
AlanDeğerDil
dc.contributor.authorGul, Fatih
dc.contributor.authorEfeoglu, Hasan
dc.date.accessioned2026-10-22T10:26:17.580041828Z
dc.date.available2026-10-22T10:26:17.580041828Z
dc.date.issued2017-01
dc.description.abstractIn this study, a direct-current reactive sputtered AliZnO/Al-based memristor device was fabricated and its resistive switching (RS) characteristics investigated. The optical and structural properties were confirmed by using UV vis spectrophotometry and x-ray diffraction, respectively. The memristive and resistive switching characteristics were determined using time dependent current voltage (I-V-t) measurements. The typical pinched hysteresis I-V loops of a memristor were observed. In addition, the device showed forming-free, uniform and bipolar RS behavior. The low electric field region exhibited ohmic conduction, while the Schottky emission (SE) was found to be the dominant conduction mechanism in the high electric field region. A weak Poole-Frenkel (PF) emission also appeared. In conclusion, it was suggested that the SE and PF mechanisms were related to the oxygen vacancies in the ZnO. (C) 2016 Elsevier Ltd. All rights reserved.
dc.description.sponsorshipScientific and Technology Research Council of Turkey [111T217]
dc.identifier.doi10.1016/j.spmi.2016.11.043
dc.identifier.endpage179
dc.identifier.issn0749-6036
dc.identifier.startpage172
dc.identifier.urihttps://rdlopen.rawdatalibrary.net/r/gumushane/15981
dc.identifier.volume101
dc.identifier.wosWOS:000393245900020
dc.language.isoen
dc.publisherACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD
dc.relation.ispartofSUPERLATTICES AND MICROSTRUCTURES
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectMemristor
dc.subjectZinc oxide
dc.subjectBipolar resistive switching
dc.subjectSchottky emission
dc.subjectOxygen vacancies
dc.subject.classificationPhysics, Condensed Matter
dc.subject.classificationPhysics
dc.subject.otherMEMORY
dc.titleBipolar resistive switching and conduction mechanism of an Al/ZnO/Al-based memristor
dc.typeArticle
dspace.entity.typePublication
rdl.citation.openalex76
rdl.citation.wos62
rdl.oa.statusclosed
rdl.source.indexWOS
rdl.wos.indexScience Citation Index Expanded (SCI-EXPANDED)