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A novel OTA-based circuit model corroborated by an experimental semiconductor memristor

MakaleYalnız künyeScopus SJRQ2

Özet

A semiconductor memristor device based on a 300-nm ZnO thin film was fabricated by direct-current reactive sputter. The memristive behavior of this device was confirmed by time dependent current–voltage (I-V-t) measurements, and the distinctive pinched hysteresis I-V loops of the memristor were observed. Structural analysis of the ZnO memristor was carried out using both X-ray powder diffraction (XRD) and scanning electron microscopy (SEM). After physical implementation of the memristor, an operational transconductance amplifier (OTA) based memristor circuit was designed to emulate the ZnO-based semiconductor memristor for use in memristor-based circuit applications. All simulations were in good agreement with experimental results. In addition, a comparison of the proposed circuit with other memristor emulators was presented.

Anahtar Kelimeler

MemristorMemristor emulatorOTAZinc oxide
RDL Kalıcı Bağlantı (PID)
https://rdlopen.rawdatalibrary.net/r/gumushane/15003Resmi atıflarda kullanılan kalıcı adres
DOI
https://doi.org/10.1016/j.mee.2018.03.012Yayıncı resmi DOI adresi
İndeks kayıtları
ScopusScopusWeb of ScienceWeb of Science
Kaydın indeks veri tabanlarındaki sayfası (aktarımda alınan kayıt numarasıyla). Erişim, indeksin kendi koşullarına bağlıdır.
Atıflar
Scopus
29
WoS
27
OpenAlex
29
Her kaynağın kendi saydığı toplam atıf; aktarım ve zenginleştirme sırasında alındı.
Tam Kayıt
AlanDeğerDil
dc.contributor.authorGul, Fatih
dc.contributor.authorBabacan, Yunus
dc.date.accessioned2026-10-22T10:23:26.771753336Z
dc.date.available2026-10-22T10:23:26.771753336Z
dc.date.issued2018
dc.description.abstractA semiconductor memristor device based on a 300-nm ZnO thin film was fabricated by direct-current reactive sputter. The memristive behavior of this device was confirmed by time dependent current–voltage (I-V-t) measurements, and the distinctive pinched hysteresis I-V loops of the memristor were observed. Structural analysis of the ZnO memristor was carried out using both X-ray powder diffraction (XRD) and scanning electron microscopy (SEM). After physical implementation of the memristor, an operational transconductance amplifier (OTA) based memristor circuit was designed to emulate the ZnO-based semiconductor memristor for use in memristor-based circuit applications. All simulations were in good agreement with experimental results. In addition, a comparison of the proposed circuit with other memristor emulators was presented.
dc.identifier.doi10.1016/j.mee.2018.03.012
dc.identifier.eissn1873-5568
dc.identifier.endpage60
dc.identifier.issn0167-9317
dc.identifier.scopus2-s2.0-85043985526
dc.identifier.startpage56
dc.identifier.urihttps://rdlopen.rawdatalibrary.net/r/gumushane/15003
dc.identifier.volume194
dc.identifier.wosWOS:000433265900010
dc.language.isoen
dc.publisherElsevier B.V.
dc.relation.ispartofMicroelectronic Engineering
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectMemristor
dc.subjectMemristor emulator
dc.subjectOTA
dc.subjectZinc oxide
dc.subject.classificationEngineering, Electrical & Electronic
dc.subject.classificationNanoscience & Nanotechnology
dc.subject.classificationOptics
dc.subject.classificationPhysics, Applied
dc.subject.classificationEngineering
dc.subject.classificationScience & Technology - Other Topics
dc.subject.classificationPhysics
dc.subject.otherCircuit simulation
dc.subject.otherII-VI semiconductors
dc.subject.otherMagnetic semiconductors
dc.subject.otherOperational amplifiers
dc.subject.otherOxide semiconductors
dc.subject.otherReactive sputtering
dc.subject.otherScanning electron microscopy
dc.subject.otherSemiconducting zinc compounds
dc.subject.otherTiming circuits
dc.subject.otherWide band gap semiconductors
dc.subject.otherX ray powder diffraction
dc.subject.otherZinc oxide
dc.subject.otherCircuit application
dc.subject.otherDirect current
dc.subject.otherMemristive behavior
dc.subject.otherMemristor
dc.subject.otherOperational transconductance amplifiers (OTA)
dc.subject.otherOTA-based circuit
dc.subject.otherTime-dependent currents
dc.subject.otherZnO thin film
dc.subject.otherMemristors
dc.titleA novel OTA-based circuit model corroborated by an experimental semiconductor memristor
dc.typeArticle
rdl.citation.openalex29
rdl.citation.scopus29
rdl.citation.wos27
rdl.oa.statusclosed
rdl.scopus.quartileQ2
rdl.source.indexSCOPUS
rdl.source.indexWOS
rdl.wos.indexScience Citation Index Expanded (SCI-EXPANDED)