A comparison of the effects of different light intensities on the current-voltage characteristics of the Si3N4 interface with various thicknesses grown on the (Au: Ti)/n-GaAs (MS) structure

Different thicknesses of Si3N4 insulator layers were grown on an (Au: Ti)/n-GaAs (MS) reference structure to analyze the effect of these layers with/without illumination on the electrical characteristics and compare the results between these structures. With this motivation, current measurements were made as a function of voltage over +/- 3 V, either in the dark or at 20-100 mW cm- 2 illumination with an increment of 20 mW cm- 2. Some important electric and optoelectronic parameters, such as barrier height at zero bias, ideality factor, saturation current at reverse bias, photosensitivity, photoresponsivity, and detectivity, have been determined using currentvoltage data in relation to illumination intensity. To compare the calculation methods used, the basic electrical parameters, the barrier height at zero bias, the ideality factor, and the series resistance were calculated first using the Thermionic Emission Method and then, alternatively, using Cheung functions. Additionally, the dependence of energy of the interface states was investigated using forward bias current voltage data with the ideality factor and barrier height with/without different intensities of illumination, because of their reordering/restructuring in electric field effects and illumination. The voltage-dependent characteristics of resistance of these structures were also determined from Ohm's Law for each illumination intensity.