2026-10-23T14:56:49Zhttps://gumushane-rdlopen.rawdatalibrary.net/oai/requestoai:gumushane-rdlopen.rawdatalibrary.net:gumushane/182392026-10-22T11:41:05Zopenairedrivercom_gumushane_10000col_gumushane_10001A Generic Circuit Model for Memristor-Based One Diode-One Resistor DevicesGül, F.Mühendislik, Elektrik ve ElektronikBilgisayar Bilimleri, Yazılım MühendisliğiBilgisayar Bilimleri, Bilgi SistemleriBilgisayar Bilimleri, Teori ve MetotlarMemristor-based resistive random access memory (RRAM) devices are very good competitors for next generation non-volatile crossbar memory applications. The sneak paths problem is one of the main constraints in fabricating crossbar memory devices. The one diode-one resistor (1D1R) structure design is effective for suppressing the sneak paths problem. Suitable circuit models are needed to simulate semiconductor structures.Ageneral circuit model for memristor-based one diode-one resistor structures is proposed in this work. The Simulation Program with Integrated Circuit Emphasis (SPICE) environment was used to simulate the designed circuit. Well-known mathematical models such as those of Strukov, Biolek, Joglekar, Prodromakis and Zha were used to simulate the memristor component of the circuit. The current-voltage characteristics were obtained for different mathematical models. All results were compatible with the expected characteristics. The best fit characteristics were acquired using the Zha and Strukov models.2019Articlehttps://rdlopen.rawdatalibrary.net/r/gumushane/18239https://doi.org/10.17694/bajece.457395enBalkan Journal of Electrical and Computer Engineeringinfo:eu-repo/semantics/openAccessinfo:eu-repo/semantics/articlehttps://gumushane-rdlopen.rawdatalibrary.net/tr/items/gumushane/18239