2026-10-24T16:22:26Zhttps://gumushane-rdlopen.rawdatalibrary.net/oai/request

oai:gumushane-rdlopen.rawdatalibrary.net:gumushane/150032026-10-23T18:22:28Zopenairecom_gumushane_10000col_gumushane_10001com_gumushane_10007col_gumushane_10171

A novel OTA-based circuit model corroborated by an experimental semiconductor memristorGul, FatihBabacan, YunusMemristorMemristor emulatorOTAZinc oxideA semiconductor memristor device based on a 300-nm ZnO thin film was fabricated by direct-current reactive sputter. The memristive behavior of this device was confirmed by time dependent current–voltage (I-V-t) measurements, and the distinctive pinched hysteresis I-V loops of the memristor were observed. Structural analysis of the ZnO memristor was carried out using both X-ray powder diffraction (XRD) and scanning electron microscopy (SEM). After physical implementation of the memristor, an operational transconductance amplifier (OTA) based memristor circuit was designed to emulate the ZnO-based semiconductor memristor for use in memristor-based circuit applications. All simulations were in good agreement with experimental results. In addition, a comparison of the proposed circuit with other memristor emulators was presented.Elsevier B.V.2018Articlehttps://rdlopen.rawdatalibrary.net/r/gumushane/15003https://doi.org/10.1016/j.mee.2018.03.0120167-9317enMicroelectronic Engineeringinfo:eu-repo/semantics/closedAccessinfo:eu-repo/semantics/articlehttps://gumushane-rdlopen.rawdatalibrary.net/tr/items/gumushane/15003